プロフィール
経歴
Kim & Chang (2013-Present)
Principal Engineer, Samsung Electronics, Austin, TX, US (2007-2009)
Senior Engineer, Samsung Electronics Semiconductor R&D Center (2001-2006)
受賞等
- Leading Lawyer: TMT (Legal Times, 2023)
著書/活動
- “A Proposal for a Business Model for Patent Management in Korea to Overcome Patent Troll Problems, ” Management and Law, Vol. 4 (Co-author, Sogang University Institute for Legal Studies, 2010.12.)
- “The Improved CVD-Al Metallization for Deep Small Contact Filling Using Selective Wetting Process, ” IITC (International Interconnect Technology Conference) (2003)
- “Plasma Induced Damage on Sub-50 Gate Oxide by PE-CVD Ti, ” PPID (Plasma and Process Induced Damage) (Co-author, 2003)
- “Investigation of the Contact Resistance between Ti/TiN and Ru in M1/Plate Contacts of RIS (Ruthenium Insulator Silicon) Capacitor,” JJAP (Japanese Journal of Applied Physics) (Co-author, 2003)
- “Investigation of the Contact Resistance Between Ti/TiN and Ru in M1/Plate Contacts of RIS (Ruthenium Insulator Silicon) Capacitor,” SSDM (Solid State Device Materials) (Co-author, 2002)
- “Enhancement of Contact Filling Characteristics in CVD-Al Metallization with Plasma-Treated MOCVD-TiN Wetting Layer,” AMC (Advanced Metallization Conference) (2002)
- “Synthesis of Polyimides Containing Triazole to Improve Their Adhesion to Copper Substrate,” Journal of Adhesion Science and Technology, Vol. 16, 1839-1851 (2002)
- Inventions: 34 domestic patents granted; 32 overseas patent applications (as of 2009)
学歴
Sogang Law School (J.D., 2013)
POSTECH (M.E., Electronics and Computer Engineering, 2001)
Yonsei University (B.E., Chemical Engineering, 1999)
資格
Admitted to bar, Korea, 2013
言語
韓国語, 英語